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Dr. Faebian Bastiman Epitaxy Explained

Dr Faebian Bastiman Post Doctoral Research Associate Paul Drude Institut, Berlin, Germany emailbastimanpdi-berlin.de tel49 30 20377-353 Faebian is currently engaged in the development of III-V nanowires on Si111 substrates. The work combines both fundamental material science with monolithic opto-electronic integration of III-V materials on Si. He received his MEng and PhD degrees in
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LINKS TO WEBSITE

Home page of E-Futures Doctoral Training Centre for Interdisciplinary Energy Research

Mercury Centre for Innovative Materials and Manufacturing. E-Futures annual conference, 2015.

Epitaxy.net

net is a knowledge database and information portal for the epitaxy community. The site is currently being updated. You can follow a link to the old site here. Thank you for your patience during this transition. And is getting an update and a face lift.

Kyle Montgomery, PhD - Research Professional in Electrical Engineering

Research Professional in Electrical Engineering. Welcome to my site! Please browse around to learn more about my work in optoelectronic devices and electronic materials. Check out my downloadable spreadsheet and plots of many semiconductor band parameters, including Group IV, III-V, and II-VI materials and their ternaries. Compound Semiconductor Growth Under Ultra-High Vacuum.

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Dr. Faebian Bastiman Epitaxy Explained

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Dr Faebian Bastiman Post Doctoral Research Associate Paul Drude Institut, Berlin, Germany emailbastimanpdi-berlin.de tel49 30 20377-353 Faebian is currently engaged in the development of III-V nanowires on Si111 substrates. The work combines both fundamental material science with monolithic opto-electronic integration of III-V materials on Si. He received his MEng and PhD degrees in

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The site had the following in the homepage, "Paul Drude Institut, Berlin, Germany." I noticed that the web site stated " Faebian is currently engaged in the development of III-V nanowires on Si111 substrates." They also stated " The work combines both fundamental material science with monolithic opto-electronic integration of III-V materials on Si. Nanowires for III-VSi platform integration. GaAsBiGaAs100 pin diodes for 1. InAsBiGaAs100 quantum dots for 1."

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